Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
Lattice parameters of AlN bulk, homoepitaxial and heteroepitaxial material
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DOI：
10.1088/0022-3727/49/17/175108
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发表时间：
2016-04
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影响因子：
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通讯作者：
D. Nilsson;E. Janzén;A. Kakanakova-Georgieva
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文献类型：
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作者：
D. Nilsson;E. Janzén;A. Kakanakova-Georgieva
Homoepitaxial layers of AlN and heteroepitaxial layers of AlN on 4H-SiC substrates were grown by metalorganic chemical vapor deposition at high temperatures up to 1400 °C, and with various thicknesses. From high resolution x-ray diffraction measurements of a set of homoepitaxial layers of high structural quality, the following mean value of the lattice constants was determined: a = 3.111 31 ± 0.000 16 Å, and c = 4.980 79 ± 0.000 11 Å. The structural quality of the heteroepitaxial layers was demonstrated, for example, by extracting the full width at a half maximum of the (0002) and (10–12) rocking curves of 25 arcsec and 372 arcsec, respectively, associated with a crack-free heteroepitaxial layer with a thickness of 1.3 μm grown at 1240 °C. From measuring a set of AlN heteroepitaxial layers, the following value of the biaxial strain relaxation coefficient was determined: RB = −0.556.
