Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr)TiO3 Capacitors for Future Dynamic Random Access Memories
Chemical Vapor Deposition of Ru and Its Application in (Ba,Sr)TiO3 Capacitors for Future Dynamic Random Access Memories
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Ru 的化学气相沉积及其在用于未来动态随机存取存储器的 (Ba,Sr)TiO3 电容器中的应用
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发表时间：
1999
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通讯作者：
KazuhiroEguchi KazuhiroEguchi
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作者：
T. Aoyama;M. Kiyotoshi;S. Yamazaki;KazuhiroEguchi KazuhiroEguchi
以Ru(C5H5)2和O2为原料，采用化学气相沉积法制备了Ru薄膜。在250℃以下，Ru膜的沉积受表面反应动力学控制，这是活化能为2.48 eV的限速步骤；在250℃以上，Ru膜的沉积受质量传递过程控制。Ru薄膜具有多晶结构，电阻率低，约为12µΩcm。在230°C下沉积的Ru膜具有良好的台阶覆盖。将化学气相沉积法制备的Ru薄膜应用于Ba0.25Sr0.75TiO3电容器的底电极上，获得了良好的电学特性。
Ru films were fabricated by chemical vapor deposition using Ru(C5H5)2 and O2. The deposition of Ru film was controlled by the surface reaction kinetics as the rate limiting step with activation energy of 2.48 eV below 250°C and by the mass transport process above 250°C. Ru films had a polycrystalline structure and showed low resistivity of about 12 µΩcm. Ru films deposited at 230°C showed excellent step coverage. We applied Ru films prepared by chemical vapor deposition to the bottom electrode of a Ba0.25Sr0.75TiO3 capacitor and obtained good electrical characteristics.