Nanocrystalline semiconducting donor-doped BaTiO3 ceramics forlaminated PTC thermistor
Nanocrystalline semiconducting donor-doped BaTiO3 ceramics forlaminated PTC thermistor
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纳米晶半导体施主掺杂 BaTiO3 陶瓷叠层 PTC 热敏电阻
DOI：
10.1016/j.jeurceramsoc.2016.11.001
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发表时间：
--
影响因子：
5.7
通讯作者：
Wei Luo
中科院分区：
文献类型：
--
作者：
Chao Gao;Qiuyun Fu;Dongxiang Zhou;Hao Zu;Tao Chen;Fei Xue;Yunxiang Hu;Zhiping Zheng;Wei Luo
本文提出了还原-再氧化相结合的两步热处理方法。样品首先在还原气氛中分两步烧结，然后在空气中进行再氧化。采用这种两步热处理方法分别对陶瓷的密度和晶粒度进行了调节。最后，首次成功制备了纳米晶半导体施主掺杂的BaTiO_3陶瓷。平均晶粒度为340nm时，样品的室温电阻率出乎意料地低，为136nmptcr，PTCR效应显著，电阻跳跃达4个数量级。此外，还计算了40 nm的耗尽层厚度和9.52T×1013 cm−2的表面受主能级密度。如此好的性能在以前的出版物中没有报道过。这也意味着在电子器件小型化的趋势下，可以生产出基于半导体BaTiO_3陶瓷的更小的元件，并提出更广泛的应用领域。
This paper proposed a two-stage thermal processing method combined with the reduction-reoxidation procedure. Samples were firstly sintered in a reducing atmosphere by two stages and then reoxidized in air. Such two-stage thermal processing method was used to adjust density and grain size of ceramics separately. Finally, nanocrystalline semiconducting donor-doped BaTiO3ceramics were first successfully prepared. Samples with average grain size of 340 nm exhibited unexpectedly low room resistivity of 136 Ω cm and a significant PTCR effect, with a resistance jump of 4 orders of magnitude. In addition, depletion layer thickness of 40 nm and surface acceptor-state densities of 9.52 × 1013cm−2were also calculated. Such good properties had not been reported in former publications. It also means that smaller components based on semiconducting BaTiO3ceramics could be produced and more extensive application field could be proposed in the trend of miniaturization of electronic devices.