Physics of organic ferroelectric field-effect transistors
Physics of organic ferroelectric field-effect transistors
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DOI：
10.1002/polb.22363
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发表时间：
2012-01-01
影响因子：
--
通讯作者：
de Leeuw, Dago M.
中科院分区：
文献类型：
--
作者：
Brondijk, Jakob J.;Asadi, Kamal;de Leeuw, Dago M.
有机电子学的大多数设想的应用需要可以被编程、擦除和电读取的非易失性存储器。铁电场效应晶体管（FeFET）由于非破坏性读出和低功耗而特别适合。在这里，提出了一个分析模型，描述了在有机FeFET的电荷传输。该模型结合了有机半导体中的铁电极化与密度相关的跳跃电荷输运的经验表达式。传递曲线可以用与所包括的铁电材料和半导体材料两者的物理性质直接相关的参数来计算。单极FeFET在极化和去极化状态之间切换，双极FeFET在两个稳定的极化状态之间切换。实验和计算电流之间的一个很好的协议。方法是通用的;可以容易地实现用于极化和电荷传输的任何其它分析模型，并且可以用于识别文献中报道的不同跨导的起源。(C)2011 Wiley Periodicals，Inc.聚合物科学杂志B部分：聚合物物理，2011年
Most of the envisaged applications of organic electronics require a nonvolatile memory that can be programmed, erased, and read electrically. Ferroelectric field-effect transistors (FeFET) are especially suitable due to the nondestructive read-out and low power consumption. Here, an analytical model is presented that describes the charge transport in organic FeFETs. The model combines an empirical expression for the ferroelectric polarization with a density dependent hopping charge transport in organic semiconductors. Transfer curves can be calculated with parameters that are directly linked to the physical properties of both the comprising ferroelectric and semiconductor materials. A unipolar FeFET switches between a polarized and depolarized state, and an ambipolar FeFET switches between two stable polarized states. A good agreement between experimental and calculated current is obtained. The method is generic; any other analytical model for the polarization and charge transport can be easily implemented and can be used to identify the origin of the different transconductances reported in the literature. (C) 2011 Wiley Periodicals, Inc. J Polym Sci Part B: Polym Phys, 2011