A selector device based on graphene–oxide heterostructures for memristor crossbar applications
A selector device based on graphene–oxide heterostructures for memristor crossbar applications
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DOI：
10.1007/s00339-015-9208-y
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发表时间：
2015-05
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通讯作者：
Miao Wang;X. Lian;Yiming Pan;Junwen Zeng;Chengyun Wang;Erfu Liu;Baigeng Wang;J. Yang;F. Miao;Dingyu Xing
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文献类型：
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作者：
Miao Wang;X. Lian;Yiming Pan;Junwen Zeng;Chengyun Wang;Erfu Liu;Baigeng Wang;J. Yang;F. Miao;Dingyu Xing
忆阻器件的大多数潜在应用采用交叉结构以实现超高密度。交叉开关架构的最大挑战之一是严重的残余漏电流（潜路径）问题。一种可能的解决方案是引入具有强非线性电流-电压（I-V）特性的选择器装置，该选择器装置与交叉杆阵列中的每个忆阻器串联。在这里，我们展示了一种新的选择器设备的基础上，石墨烯氧化物异质结构，成功地将一个典型的线性TaOx忆阻器转换成非线性器件。详细研究了异质结构中非线性的起源，突出了石墨烯-氧化物界面的重要作用。
Most of the potential applications of memristive devices adopt crossbar architecture for ultra-high density. One of the biggest challenges of the crossbar architecture is severe residue leakage current (sneak path) issue. A possible solution is introducing a selector device with strong nonlinear current–voltage (I–V) characteristics in series with each memristor in crossbar arrays. Here, we demonstrate a novel selector device based on graphene–oxide heterostructures, which successfully converts a typical linear TaOxmemristor into a nonlinear device. The origin of the nonlinearity in the heterostructures is studied in detail, which highlights an important role of the graphene–oxide interfaces.