Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
Optical and Surface Characteristics of Mg-Doped GaAs Nanocrystalline Thin Film Deposited by Thermionic Vacuum Arc Technique
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DOI：
10.1007/s11664-016-4861-2
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发表时间：
2016
影响因子：
2.1
通讯作者：
S. Pat;Soner Özen;Volkan Şenay;Ş. Korkmaz
中科院分区：
文献类型：
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作者：
S. Pat;Soner Özen;Volkan Şenay;Ş. Korkmaz
镁 (Mg) 是砷化镓 (GaAs) 半导体技术中最有前途的 p 型掺杂剂。采用热离子真空电弧技术在室温下沉积了镁掺杂砷化镓纳米晶薄膜，这是一种用于生产掺杂砷化镓材料的快速沉积方法。通过X射线衍射分析、扫描电子显微镜、能量色散X射线光谱、原子力显微镜、紫外可见分光光度法和干涉测量法研究了沉积样品的微观结构、表面和光学性质。沉积样品的结晶方向确定为分别在44.53°和72.30°处的(220)面和(331)面。 Mg掺杂的GaAs纳米晶样品表现出高透过率。
Magnesium (Mg) is the most promisingp-type dopant for gallium arsenide (GaAs) semiconductor technology. Mg-doped GaAs nanocrystalline thin film has been deposited at room temperature by the thermionic vacuum arc technique, a rapid deposition method for production of doped GaAs material. The microstructure and surface and optical properties of the deposited sample were investigated by x-ray diffraction analysis, scanning electron microscopy, energy-dispersive x-ray spectroscopy, atomic force microscopy, ultraviolet–visible spectrophotometry, and interferometry. The crystalline direction of the deposited sample was determined to be (220) plane and (331) plane at 44.53° and 72.30°, respectively. The Mg-doped GaAs nanocrystalline sample showed high transmittance.