Importance of Recombination at the TCO/Electrolyte Interface for High Efficiency Quantum Dot Sensitized Solar Cells
Importance of Recombination at the TCO/Electrolyte Interface for High Efficiency Quantum Dot Sensitized Solar Cells
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DOI：
10.1021/jp306782q
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发表时间：
2012-08
影响因子：
3.7
通讯作者：
S. Rühle;S. Yahav;Shlomit Greenwald;A. Zaban
中科院分区：
文献类型：
--
作者：
S. Rühle;S. Yahav;Shlomit Greenwald;A. Zaban
在这里，我们表明，在CdSe量子点敏化太阳能电池（QDSC），电子的重组从透明导电氧化物（TCO）前电极与氧化物种的多硫化物氧化还原电解质不能被忽略，如在染料敏化太阳能电池（DSC）。我们表明，光到电功率转换效率高达4%，可以实现时，在前电极的复合抑制由一个紧凑的TiO 2层之间的TCO基板和QD敏化多孔TiO 2膜沉积。基于一个简单的等效电路的数值模拟表明，在一个很宽的电位范围内，电子转移到电解质在TCO基板是占主导地位的复合路径，这通常是不考虑，这表明目前的理解QDSC进行了修订。
Here, we show that, in CdSe quantum dot sensitized solar cells (QDSCs), recombination of electrons from the transparent conducting oxide (TCO) front electrode with oxidized species of the polysulfide redox electrolyte cannot be neglected like in dye-sensitized solar cells (DSCs). We demonstrate that light to electric power conversion efficiencies up to 4% can be achieved when recombination at the front electrode is suppressed by a compact TiO2 layer deposited in between the TCO substrate and the QD sensitized porous TiO2 film. Numerical simulations based on a simple equivalent circuit suggest that, over a wide potential range, electron transfer into the electrolyte at the TCO substrate is the dominant recombination path, which is usually not considered, suggesting that the current understanding of QDSCs has to be revised.