High-Performance Solution-Processed n-Channel Organic Thin-Film Transistors Based on a Long Chain Alkyl-Substituted C60 Derivative
High-Performance Solution-Processed n-Channel Organic Thin-Film Transistors Based on a Long Chain Alkyl-Substituted C60 Derivative
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DOI：
10.1143/apex.3.101601
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Konishi, Hisatoshi
中科院分区：
文献类型：
--
作者：
Horii, Yoshinori;Sakaguchi, Koichi;Konishi, Hisatoshi
我们报告了基于长链烷基取代的富勒烯衍生物 C-60 稠合 N-甲基吡咯烷-间十二烷基苯基 (C60MC12) 的高性能溶液处理 n 沟道有机薄膜晶体管，通过绝缘体的表面改性。 C60MC12 薄膜是通过旋涂在自组装单层 (SAM) 处理的栅极绝缘体上制造的，这通过基板边缘的亲水图案化来促进。 X射线衍射表明，SAM处理后C60MC12薄膜的结晶度得到改善。经过十八烷基三氯硅烷处理的器件表现出0.4-0.5 cm(2) V-1 s(-1)的高迁移率，与非晶硅薄膜晶体管相当。还观察到 SAM 处理对偏置应力稳定性的改善。 (C) 2010 日本应用物理学会
We report on high-performance solution-processed n-channel organic thin-film transistors based on a long-chain alkyl-substituted fullerene derivative, C-60-fused N-methylpyrrolidine-meta-dodecyl phenyl (C60MC12), by surface modification of an insulator. C60MC12 films were fabricated on self-assembled monolayer (SAM)-treated gate insulators by spin-coating, which was facilitated by hydrophilic patterning of the edge of the substrate. X-ray diffraction revealed that the crystallinity of C60MC12 films was improved by SAM treatment. The octadecyltrichlorosilane-treated device demonstrated a high mobility of 0.4-0.5 cm(2) V-1 s(-1), which is comparable with those of amorphous silicon thin-film transistors. An improvement in bias stress stability by the SAM treatment was also observed. (C) 2010 The Japan Society of Applied Physics