Two-dimensional antimony selenide (Sb2Se3) nanosheets prepared by hydrothermal method for visible-light photodetectors
Two-dimensional antimony selenide (Sb2Se3) nanosheets prepared by hydrothermal method for visible-light photodetectors
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DOI：
10.1016/j.solener.2022.01.019
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发表时间：
2022-02
期刊：
影响因子：
6.7
通讯作者：
Jing Wang;S. Rehman;Yang Xu;Binzhou Zuo;Haohang Cheng;L. Guo;Bin Zou;Xiaoming Zhang;
中科院分区：
文献类型：
--
作者：
Jing Wang;S. Rehman;Yang Xu;Binzhou Zuo;Haohang Cheng;L. Guo;Bin Zou;Xiaoming Zhang;
二维sb2se3是一种p型半导体材料，是VA-VIA族的重要成员，由于其稳定的结构和优异的光电性能而受到广泛关注。本研究首次采用高度简便的水热法制备了sb2se3纳米片。采用XRD、SEM、Raman、TEM和AFM等分析手段研究了三硒化锑纳米片的形貌。大多数二维纳米片为矩形或平行四边形，长度为2 ~ 16 μm，宽度为1 ~ 8 μm，厚度为17 ~ 40 nm。声子色散表明sb2se3纳米片具有热力学稳定性。通过吸收光谱分析，计算出合成纳米片的带隙为~ 1.55 eV，这与我们的第一性原理计算结果（1.58 eV）非常吻合。通过开发基于薄膜的光电探测器，探索了制备的纳米片的光电特性，该探测器对可见光具有较好的响应，“开/关”比为10.8，响应/恢复时间短（0.40/0.12 s），长期耐用。基于sb2se3纳米片的光电探测器在黑暗和光照下的电流均有显著改善。目前的研究可能是推动基于sb2se3纳米片的半导体用于高性能光电应用的关键一步。
Two-dimensional Sb2Se3is a p-type semiconductor material, a prominent member of VA-VIA group, which has drawn widespread attention due to stable structure, excellent optoelectronic and photoelectric properties as compared to its bulk counterpart. In current work, Sb2Se3nanosheets are synthesized for the first time by highly facile hydrothermal method. The antimony triselenide nanosheets morphology is investigated by XRD, SEM, Raman, TEM and AFM analysis. Majority of 2D nanosheets are rectangles and parallelograms, having length, width, and thickness from 2 to 16 μm, 1 to 8 μm, and 17 to 40 nm respectively. The phonon dispersion reveals that Sb2Se3nanosheets are thermodynamically stable. The bandgap of as-synthesize nanosheets, by analysis of absorption spectra, is calculated to be ∼ 1.55 eV which is well consistent with our first principles calculations (1.58 eV). The photoelectric characteristics of fabricated nanosheets are explored by developing a film-based photodetector, which shows a better response to visible-light with an “ON/OFF” ratio of 10.8 with short response/recovery times (0.40/0.12 s) and long-term durability. The electric current of Sb2Se3nanosheets based photodetector has shown significant improvement in both dark and under light illumination. Current study could be a crucial move in promoting Sb2Se3nanosheets based semiconductors for high performance optoelectronic applications.