Nanowire‐Induced Wurtzite InAs Thin Film on Zinc‐Blende InAs Substrate
Nanowire‐Induced Wurtzite InAs Thin Film on Zinc‐Blende InAs Substrate
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闪锌矿 InAs 基底上的纳米线诱导纤锌矿 InAs 薄膜
DOI：
10.1002/adma.200900617
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发表时间：
2009
影响因子：
29.4
通讯作者：
L. Samuelson
中科院分区：
文献类型：
--
作者：
J. Bao;D. Bell;F. Capasso;N. Erdman;Dongguang Wei;L. Fröberg;T. Mårtensson;L. Samuelson
在混锌矿InAs衬底上发现了一种纤锌矿晶体结构。由纤锌矿诱导的InAs纳米线、纤锌矿InAs薄膜及其相关的锌-闪锌矿/纤锌矿异晶异质结构可能在带隙工程和相关器件应用中开辟新的机遇。
InAs pyramids and platelets on a zinc-blende InAs substrate are found to exhibit a wurtzite crystal structure. induced by wurtzite InAs nanowires, wurtzite InAs thin film and its associated zinc-blende/wurtzite heterocrystalline heterostructures may open up new opportunities in band-gap engineering and related device applications.