Probing the Nature of Defects in Graphene by Raman Spectroscopy
Probing the Nature of Defects in Graphene by Raman Spectroscopy
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DOI：
10.1021/nl300901a
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发表时间：
2012-08-01
期刊：
影响因子：
10.8
通讯作者：
Casiraghi, Cinzia
中科院分区：
文献类型：
--
作者：
Eckmann, Axel;Felten, Alexandre;Casiraghi, Cinzia
拉曼光谱能够通过缺陷激活峰探测石墨烯中的无序。将这些特征与疾病的本质联系起来是非常有趣的。在这里，我们提出了一个详细的分析拉曼光谱的石墨烯含有不同类型的缺陷。我们发现，D和D'峰的强度比对于sp（3）缺陷是最大的（类似于13），对于类空位缺陷它减小（类似于7），并且对于石墨中的边界它达到最小值（类似于3.5）。这使得拉曼光谱成为全面表征石墨烯的有力工具。
Raman spectroscopy is able to probe disorder in graphene through defect-activated peaks. It is of great interest to link these features to the nature of disorder. Here we present a detailed analysis of the Raman spectra of graphene containing different type of defects. We found that the intensity ratio of the D and D' peak is maximum (similar to 13) for sp(3)-defects, it decreases for vacancy-like defects (similar to 7), and it reaches a minimum for boundaries in graphite (similar to 3.5). This makes Raman Spectroscopy a powerful tool to fully characterize graphene.