Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties.
Fabrication of a GaAs quantum-well-wire structure by Ga focused-ion-beam implantation and its optical properties.
复制标题
Ga聚焦离子束注入GaAs量子阱线结构及其光学性能。
DOI：
10.1103/physrevb.37.2774
复制
发表时间：
1988
期刊：
影响因子：
--
通讯作者：
Okamoto
中科院分区：
文献类型：
--
作者：
Hirayama;Tarucha;Suzuki;Okamoto
A quantum-well wire was fabricated with use of local intermixing of a GaAs-Al x Ga 1− x As single-quantum-well epitaxial layer induced by Ga focused-ion-beam implantation. Fine structures were observed in low temperature photoluminescence and photoluminescence excitation spectra. These fine structures are explained by the density of states specific to the two-dimensionally confined carrier system.
