A DISCRETE TO CONTINUUM ANALYSIS OF DISLOCATIONS IN NANOWIRE HETEROSTRUCTURES
A DISCRETE TO CONTINUUM ANALYSIS OF DISLOCATIONS IN NANOWIRE HETEROSTRUCTURES
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纳米线异质结构中位错的离散连续分析
DOI：
10.4310/cms.2015.v13.n5.a3
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发表时间：
2013
影响因子：
1
通讯作者：
A. Schlomerkemper
中科院分区：
文献类型：
--
作者：
G. Lazzaroni;M. Palombaro;A. Schlomerkemper
外延生长的异质纳米线半径较大时，在相界面处会出现位错。我们考虑了一个相应的具有二次成对原子相互作用能的变分离散模型。通过使用伽玛收敛的概念和几何刚性估计，我们执行了一个离散到连续极限和降维到一维系统。此外，我们比较了一个无缺陷的模型和模型的界面处的位错，并表明，后者是积极方便，如果线的厚度是足够大的。
Epitaxially grown heterogeneous nanowires present dislocations at the interface between the phases if their radius is big. We consider a corresponding variational discrete model with quadratic pairwise atomic interaction energy. By employing the notion of Gamma-convergence and a geometric rigidity estimate, we perform a discrete to continuum limit and a dimension reduction to a one-dimensional system. Moreover, we compare a defect-free model and models with dislocations at the interface and show that the latter are energetically convenient if the thickness of the wire is sufficiently large.