Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C
Operation of Schottky‐barrier field‐effect transistors of 3C‐SiC up to 400 °C
复制标题
3C-SiC 肖特基势垒场效应晶体管的工作温度高达 400 °C
DOI：
10.1063/1.99010
复制
发表时间：
1987
影响因子：
4
通讯作者：
S. Yoshida
中科院分区：
文献类型：
--
作者：
H. Daimon;M. Yamanaka;M. Shinohara;E. Sakuma;S. Misawa;K. Endo;S. Yoshida
肖特基势垒场效应晶体管已由 3C-SiC 制成，并且已在高达 400°C 的温度下研究了晶体管的工作情况。通过化学气相沉积在 p 型 Si 衬底上连续生长 B 掺杂高电阻率和未掺杂 n 型 3C-SiC 外延层。 Au 和 Al 电极分别用于肖特基势垒栅极接触以及 n 型 3C-SiC 的源极和漏极接触。在室温和400°C下分别获得1.7和0.15 mS/mm的跨导。
Schottky‐barrier field‐effect transistors have been fabricated from 3C‐SiC and transistor operation has been studied at temperatures up to 400 °C. B‐doped high‐resistivity and undoped n‐type 3C‐SiC epilayers were successively grown on p‐type Si substrates by chemical vapor deposition. Au and Al electrodes were used for Schottky‐barrier gate contacts and source and drain contacts for n‐type 3C‐SiC, respectively. Transconductances of 1.7 and 0.15 mS/mm were obtained at room temperature and 400 °C, respectively.