Giant Goos-Hanchen shift with a high reflectance assisted by interface states in photonic heterostructures
Giant Goos-Hanchen shift with a high reflectance assisted by interface states in photonic heterostructures
复制标题
光子异质结构中界面态辅助下具有高反射率的巨大古斯-汉欣位移
DOI：
10.1103/physreva.101.053838
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发表时间：
2020
影响因子：
2.9
通讯作者：
Chen Hong
中科院分区：
文献类型：
--
作者：
Wu Jiaju;Wu Feng;Lv Keqiang;Guo Zhiwei;Jiang Haitao;Sun Yong;Li Yunhui;Chen Hong
我们在由两种对称的全介质一维光子晶体构成的光子异质结构中获得了高反射率的界面态。界面态的反射率可以通过调节两种一维光子晶体虚相位之间的失配度来灵活控制。借助于高反射率和高Q因子的界面态，古斯-汉臣（GH）位移可以大大增强到三个波长以上。我们的工作提供了一条路线，完全在目前的实验条件下，设计高性能的敏感传感器，波分解复用器，偏振分束器的基础上，这个巨大的GH移位加上高反射率。
We achieve interface states with a high reflectance in photonic heterostructures composed of two kinds of all-dielectric one-dimensional photonic crystals (1DPCs) with symmetric unit cells. The reflectance of interface states can be controlled flexibly by tuning the mismatch degree between the imaginary phases of the two kinds of 1DPCs. Assisted by the interface state with a high reflectance as well as a high-Q factor, the Goos-Hanchen (GH) shift can be greatly enhanced to larger than three orders of wavelengths. Our work provides a route, completely under the current experimental conditions, to design high-performance sensitive sensors, wavelength division demultiplexers, and polarization beam splitters based on this giant GH shift together with a high reflectance.