FIB processing of silicon in the nanoscale regime
FIB processing of silicon in the nanoscale regime
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DOI：
10.1007/s00339-002-1890-x
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发表时间：
2003-03-01
影响因子：
2.7
通讯作者：
Bertagnolli, E
中科院分区：
文献类型：
--
作者：
Lugstein, A;Basnar, B;Bertagnolli, E
我们研究了特征尺寸缩小对聚焦离子束在晶体硅上溅射效率的影响。在此分析的基础上，我们已经证明了决定硅的复杂响应的主要竞争机制。用50 keV的Ga+离子束在10（13）ions/cm（2）到10（15）ions/cm（2）的范围内进行低剂量辐照，由于非晶化，硅产生明显的膨胀。更高的剂量导致材料去除，效率约为2.5原子/离子。溅射产率，促进自聚焦效应结合溅射速率增加在斜角，和相反的剂量不足的影响，确定了纳米级沟槽铣削的复杂特性。收缩的临界尺寸导致更高的溅射产率，归因于入射离子的自聚焦效应在统一的区域中的纵横比处成为主导。在纵横比超过统一，再沉积是占主导地位的影响。
We have investigated the impact of shrinking feature sizes on the sputter efficiency of focused ion beams on crystalline silicon. On the basis of this analysis, we have demonstrated the main competitive mechanisms determining the complex response of silicon. Low-dose irradiation with a 50-keV Ga+ beam in the range from 10(13) ions/cm(2) to 10(15) ions/cm(2) produced pronounced swelling of the silicon due to amorphization. Higher doses led to material removal with an efficiency of about 2.5 atoms/ion. A sputter yield promoting the self-focusing effect combined with the sputter rate increase at oblique angles, and an opposing dose-deficiency effect, determined the complex characteristics of nanoscale trench milling. Shrinking critical dimensions led to higher sputter yields, attributable to self-focusing effects of incident ions becoming dominant at aspect ratios in the region of unity. At aspect ratios beyond unity, re-deposition was the dominant effect.