Co-Pt-Cr-CoSi-CoO Sintered Target for Low Ar-gas-pressure Deposition of CoPtCr-SiO2 Granular Film with Stoichiometric SiO2 Phase
Co-Pt-Cr-CoSi-CoO Sintered Target for Low Ar-gas-pressure Deposition of CoPtCr-SiO2 Granular Film with Stoichiometric SiO2 Phase
复制标题
用于低Ar气压沉积化学计量SiO2相CoPtCr-SiO2颗粒薄膜的Co-Pt-Cr-CoSi-CoO烧结靶
DOI：
10.1109/tmag.2013.2274050
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发表时间：
2013
影响因子：
2.1
通讯作者：
and Migaku Takahashi
中科院分区：
文献类型：
--
作者：
Shingo Sasaki;Shin Saito;and Migaku Takahashi
提出了一种用于低Ar气压沉积CoPtCr-SiO2颗粒状垂直磁记录介质的新型复合靶材。所提出的靶材是由CoSi和CoO粉末代替SiO2粉末组成的Co-Pt-Cr-CoSi-富CoO烧结靶材。对颗粒膜的成分、微结构和磁性能进行了系统的分析，结果表明：（1）在本溅射系统中，采用CoO/CoSi比为3的靶材，可以获得O/Si比为2的Co_（74）Pt_（16）Cr_（10 - 8mol%SiO_2）颗粒膜;（2）在S=1，Hc= 5.0kOe的介质中，在0.6Pa的低PAr下，α = 2.9。这意味着只有Si氧化成SiO2才对磁去耦很重要。
A new type of composite target is proposed for low Ar-gas-pressure (PAr) deposition of CoPtCr-SiO2granular perpendicular magnetic recording media. The proposed target is a Co-Pt-Cr-CoSi-enriched CoO sintered target, consisting of CoSi and CoO powders instead of SiO2powder. Systematic analysis of film composition, microstructure, and magnetic properties of the granular films revealed that 1) the Co74Pt16Cr10-8mol%SiO2granular film with O/Si ratio of 2 in the film is realized by using a CoO/CoSi ratio of 3 in the target for our sputtering system, and 2) media with S=1, Hc=5.0 kOe, and α = 2.9 was realized even under a low PArof 0.6 Pa. This means that just the oxidization of Si into SiO2is important for magnetic decoupling.