Strain field in (Ga,Mn)As/GaAs periodic wires revealed by coherent X-ray diffraction
Strain field in (Ga,Mn)As/GaAs periodic wires revealed by coherent X-ray diffraction
复制标题
相干 X 射线衍射揭示 (Ga,Mn)As/GaAs 周期线中的应变场
DOI：
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发表时间：
2011
期刊：
影响因子：
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通讯作者：
T. Baumbach
中科院分区：
文献类型：
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作者：
A. Minkevich;E. Fohtung;T. Slobodskyy;M. Riotte;D. Grigoriev;T. Metzger;A. Irvine;V. Novák;V. Holý;T. Baumbach
利用相干衍射无透镜显微技术对GaAs（001）衬底上光刻图形化（Ga，Mn）As阵列的全应变张量和应变诱导磁晶各向异性进行了实验和模拟研究。我们证明了我们的技术的能力，以获得深入了解属于衬底的晶体部分中传播的应变场。实验重建的应变场与基于弹性理论的模拟结果吻合良好。
An experimental and simulation study of the full strain tensor and of strain-induced magnetocrystalline anisotropies in arrays of lithographically patterned (Ga,Mn)As on GaAs(001) is performed using a coherent diffraction lensless microscopy technique. We demonstrate the ability of our technique to get an insight into the strain field propagating in the crystal part belonging to the substrate. The experimentally reconstructed strain fields are in good agreement with those obtained from simulations based on elasticity theory.
影响因子：
8.6
作者：
Scherbakov, A. V.;Salasyuk, A. S.;Bayer, M.
通讯作者：
Bayer, M.