Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si Substrate
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DOI：
10.1002/smll.201704062
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发表时间：
2018-05-09
期刊：
影响因子：
13.3
通讯作者：
Park, Byung-Gook
中科院分区：
文献类型：
--
作者：
Kim, Sungjun;Jung, Sunghun;Park, Byung-Gook
据报道，一种可行的方法可以通过简单地将单元尺寸减小到 100 nm 以下来降低开关电流并增加互补金属氧化物半导体 (CMOS) 兼容的 Ti/SiNx/p(+)-Si 忆阻器的非线性度。尽管开关电压随着器件尺寸的减小而逐渐增加，但由于电流过冲效应的减小，复位电流也减小了。小型器件（低于 100 nm）表现出由电场驱动的逐渐复位开关，而大型器件（>= 1 μm）则由焦耳热驱动。对于缩放单元（60 nm），可以通过调整多级单元的复位停止电压来调节电流水平。结果表明，低电阻状态下的非线性归因于缩放电池在高电压状态（>= 1 V）中占主导地位的 Fowler-Nordheim 隧道效应。实验结果表明，按比例缩放的金属氮化物硅忆阻器器件为实现 CMOS 兼容的高密度交叉点阵列应用铺平了道路。
A feasible approach is reported to reduce the switching current and increase the nonlinearity in a complementary metal-oxide-semiconductor (CMOS)-compatible Ti/SiNx/p(+)-Si memristor by simply reducing the cell size down to sub-100 nm. Even though the switching voltages gradually increase with decreasing device size, the reset current is reduced because of the reduced current overshoot effect. The scaled devices (sub-100 nm) exhibit gradual reset switching driven by the electric field, whereas that of the large devices (>= 1 mu m) is driven by Joule heating. For the scaled cell (60 nm), the current levels are tunable by adjusting the reset stop voltage for multilevel cells. It is revealed that the nonlinearity in the low-resistance state is attributed to Fowler-Nordheim tunneling dominating in the high-voltage regime (>= 1 V) for the scaled cells. The experimental findings demonstrate that the scaled metal-nitride-silicon memristor device paves the way to realize CMOS-compatible high-density crosspoint array applications.