High-Density Shift-Register-Based Rapid Single-Flux-Quantum Memory System for Bit-Serial Microprocessors
High-Density Shift-Register-Based Rapid Single-Flux-Quantum Memory System for Bit-Serial Microprocessors
复制标题
用于位串行微处理器的基于高密度移位寄存器的快速单通量量子存储器系统
DOI：
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发表时间：
2016
影响因子：
1.8
通讯作者：
A. Fujimaki
中科院分区：
文献类型：
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作者：
Masamitsu Tanaka;R. Sato;Yuki Hatanaka;A. Fujimaki
我们展示了一个基于快速单通量量子（RSFQ）逻辑的高密度移位寄存器随机存取存储器系统。该存储器系统被开发为与位串行RSFQ微处理器集成，称为CORE e系列。它由移位寄存器阵列存储数据、译码器选择给定地址指向的移位寄存器、合并器输出数据组成。为了实现高密度，我们引入了一种新的存储系统结构，并设计了紧凑的存储元件和其他外围组件。我们集成了两个256位的存储器系统（32个条目的8位数据和指令每个）与CORE e微处理器，并制作了它使用的国家先进工业科学技术研究所10-kA/cm 2先进工艺。每个存储器系统占用的面积为2.69 mm 2。我们在低频测试中获得了所有地址的正确操作。典型的测量偏倚裕度为86%-106%。
We demonstrated a high-density shift-register-based random access memory system based on rapid single-flux-quantum (RSFQ) logic. This memory system was developed to be integrated with bit-serial RSFQ microprocessors, which are called the CORE e series. It is composed of a shift-register array to store data, a decoder to select the shift register pointed to by a given address, and mergers to output data. To achieve high density, we introduced a new memory system structure and designed compact storage elements and other peripheral components. We integrated two 256-bit memory systems (32 entries for 8-bit data and instructions each) with a CORE e microprocessor and fabricated it using the National Institute of Advanced Industrial Science and Technology 10-kA/cm2 Advanced Process. The area occupied by each memory system is 2.69 mm2. We obtained correct operations for all of the addresses in low-frequency tests. The typical measured bias margin was 86%-106%.