Nanostructured silicon carbide ceramics fabricated through liquid-phase sintering by spark plasma sintering
Nanostructured silicon carbide ceramics fabricated through liquid-phase sintering by spark plasma sintering
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DOI：
10.2109/jcersj2.119.129
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发表时间：
2011-02-01
影响因子：
1.1
通讯作者：
Hojo, Junichi
中科院分区：
文献类型：
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作者：
Hotta, Mikinori;Kita, Hideki;Hojo, Junichi
采用放电等离子体烧结法，在烧结助剂（95mol%AIN和5mol%Y2O3）总含量为10vol%的条件下，对直径为40 nm的纳米β-SiC粉体进行液相烧结，制备了致密的纳米SiC陶瓷。在1900 ℃下烧结300 s的致密SiC陶瓷由平均晶粒尺寸为70 nm的等轴晶粒组成，在烧结过程中没有明显的晶粒生长。当AlN-Y_2 O_3添加剂的体积分数大于5%时，纳米β-SiC粉末的完全致密化（理论值的99%以上）得以实现。随着AlN-Y2 O3添加剂总量的增加和1900 ℃保温时间的缩短，晶粒尺寸减小。（C）2011年日本陶瓷学会。All rights reserved.
Fully dense nanostructured SiC ceramics were fabricated by spark plasma sintering of nanosized beta-SiC powder with 40 nm in diameter through liquid-phase sintering at the total content of 10 vol % of sintering additives composed of 95 mol % AIN and 5 mol % Y2O3. The dense SiC ceramics sintered at 1900 degrees C for 300 s consisted of equiaxed grains with the mean grain size of 70 nm without significant grain growth during the sintering. The full densification (>99% of theoretical) of the nanosized beta-SiC powder was achieved at more than 5 vol % of the AIN-Y2O3 additive. The grain size decreased with increasing total amount of AIN-Y2O3 additive and decreasing holding time at 1900 degrees C. (C)2011 The Ceramic Society of Japan. All rights reserved.