Control of Phase in Tin Sulfide Thin Films Produced via RF-Sputtering of SnS2 Target with Post-deposition Annealing
Control of Phase in Tin Sulfide Thin Films Produced via RF-Sputtering of SnS2 Target with Post-deposition Annealing
复制标题
DOI：
10.1007/s11664-015-4137-2
复制
发表时间：
2016-01-01
影响因子：
2.1
通讯作者：
Horn, M. W.
中科院分区：
文献类型：
--
作者：
Banai, R. E.;Cordell, J. C.;Horn, M. W.
一硫化二锡（SnS）是一种新型的薄膜光致发光材料。基于SnS的器件在提高太阳能电池效率方面取得了有限的成功。虽然退火是用于改善薄膜质量的典型沉积后处理，但是硫挥发性是一个问题，尽管硫化锡化合物中存在强Sn-S键。富硫溅射硫化锡薄膜在真空环境中的退火以前没有报道。在目前的工作中，我们研究了退火，溅射硫化锡薄膜的光电性能，晶相，和形态。具体来说，我们研究了相变和改善材料质量的结果，沉积后的热处理。在衬底加热和不加热的情况下溅射硫化锡薄膜。然后在沉积室中在中等真空（< 1 × 10（-4）Pa）下在300 A摄氏度和500 A摄氏度之间对这些样品进行退火，以找到用于生产α-SnS的最佳退火工艺。显着改善的结晶度和形态被认为是在富硫薄膜退火在400- 500 A摄氏度60分钟。退火膜的电阻率在30-300 Ω-cm的范围内。通过计算的相图证实了实验观察结果，其表明在低压下约400 A摄氏度的退火对于从非晶SnS 2膜获得相纯的α-SnS膜是最佳的。
Tin (II) Monosulfide (SnS) has become an interesting new material for thin film photovoltaics. SnS-based devices have achieved limited success in improved solar cell efficiency. While annealing is a typical post-deposition treatment used to improve thin film quality, sulfur volatility is an issue, despite strong Sn-S bonds in tin sulfide compounds. Annealing of sulfur-rich sputtered tin sulfide thin films in a vacuum environment has not been previously reported. In the present work, we investigated the optoelectronic properties, crystallographic phase, and morphology of annealed, sputtered tin sulfide thin films. Specifically, we studied the phase change and improvement in material quality as a result of post-deposition heat treatments. Tin sulfide thin films were sputtered with and without substrate heating. These samples were then annealed between 300A degrees C and 500A degrees C under moderate vacuum (< 1 x 10(-4) Pa) in the deposition chamber to find the optimal annealing process for producing alpha-SnS. Significantly improved crystallinity and morphology were seen in sulfur-rich thin films annealed at 400-500A degrees C for 60 min. Annealed films had resistivity in the range of 30-300 Omega-cm. Experimental observations were confirmed by calculated phase diagrams, which show that annealing around 400A degrees C at low pressure is optimal to obtain a phase-pure alpha-SnS film from an amorphous SnS2 film.