Plasma-Induced Electronic Defects: Generation and Annihilation Kinetics in Hydrogenated Amorphous Silicon
Plasma-Induced Electronic Defects: Generation and Annihilation Kinetics in Hydrogenated Amorphous Silicon
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DOI：
10.1103/physrevapplied.10.054006
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发表时间：
2018-11
影响因子：
4.6
通讯作者：
S. Nunomura;I. Sakata;K. Matsubara
中科院分区：
文献类型：
--
作者：
S. Nunomura;I. Sakata;K. Matsubara
等离子体加工是制造先进半导体器件的关键技术。器件性能通常受到等离子体加工过程中产生的电子缺陷的限制，尽管这些缺陷中的大多数可以通过电镀层消除。本文通过实验研究了氢化非晶硅（）在氢（-）和氩（-）等离子体处理和连续镀后的缺陷动力学。通过对光电流的测量，监测了硅悬空键等电子缺陷的产生和湮灭。测量结果表明：(1)缺陷主要由自由基产生，如非等离子体的亚稳态原子和非等离子体的亚稳态原子。（ii）离子轰击产生残留缺陷，而离子轰击不会产生此类缺陷。残余缺陷大多通过附加等离子体和镀后处理来恢复。(3)缺陷的湮灭表现为拉伸指数行为，揭示了。缺陷湮灭的活化能取决于缺陷产生的来源。等离子体处理缺陷的活化能比光子辐照缺陷的活化能小。描述了缺陷产生和湮灭的速率方程，并根据与氢扩散相关的微观结构变化讨论了缺陷动力学。
Plasma processing is a key technology for fabrication of state-of-the-art semiconductor devices. The device performance is often limited by electronic defects generated during plasma processing, although most of those defects are annihilated by postannealing. Here we experimentally study the defect kinetics in hydrogenated amorphous silicon () during hydrogen- (-) and argon- (-) plasma treatment, and also consecutive postannealing. The generation and annihilation of electronic defects such as silicon dangling bonds are monitored viain situmeasurements of the photocurrent. From the measurements, the following results are found: (i) The defects are generated dominantly by radical species such asatoms for aplasma and metastableatoms for anplasma. (ii) The-ion bombardment creates residual defects, whereas the-ion bombardment does not create such defects. The residual defects are mostly recovered by an additional-plasma and postannealing treatment. (iii) The annihilation of defects exhibits stretched exponential behavior, revealing the dispersive nature of. (iv) The activation energy for the annihilation of defects depends on the origins of the defect generation. The activation energy is smaller for defects generated by plasma treatments compared with that for defects induced by photon irradiation. A rate equation for the generation and annihilation of defects is described, and the defect kinetics is discussed in terms of microstructural changes associated with hydrogen diffusion.