Gap‐state measurements on diamond‐like carbon films
Gap‐state measurements on diamond‐like carbon films
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类金刚石碳薄膜的能隙态测量
DOI：
10.1063/1.111955
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发表时间：
1994
影响因子：
4
通讯作者：
A. Hammerschmidt
中科院分区：
文献类型：
--
作者：
Th. Mandel;M. Frischholz;R. Helbig;A. Hammerschmidt
采用高频电容-电压法测量了类金刚石（DLC）薄膜的电子能隙态密度。差距-态密度是从晶体硅（c-Si）异质结上DLC的高频电容-电压特性的分析得出的。在费米能级附近，DLC薄膜中的带隙差距态密度达到1016 cm − 3 eV − 1的量级。此外，DLC/c-Si异质结的能带图进行了评估，并推导出DLC的功函数为3.6 eV。
A high frequency capacitance‐voltage method is used to measure the electronic gap‐state density in diamond‐like carbon (DLC) films. The gap‐state density is derived from the analysis of high frequency capacitance‐voltage characteristics of DLC on crystalline silicon (c‐Si) heterojunctions. Near the Fermi level the gap‐state density in the DLC thin film is obtained of the order 1016 cm−3 eV−1. Furthermore, the energy‐band diagram of a DLC/c‐Si heterojunction is evaluated, and the work function of DLC is derived to be 3.6 eV.