High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
High-speed technologies based on III-V compound semiconductors at Fraunhofer IAF
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Fraunhofer IAF 基于 III-V 族化合物半导体的高速技术
DOI：
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
M. Caris
中科院分区：
文献类型：
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作者：
M. Mikulla;A. Leuther;P. Bruckner;D. Schwantuschke;A. Tessmann;M. Schlechtweg;O. Ambacher;M. Caris
在弗劳恩霍夫应用固态物理研究所（IAF），III-V族化合物半导体被用于高速技术。在这里，我们专注于GaN基单片毫米波集成电路（MMIC）的应用频率范围在2 GHz和100 GHz之间，并在变形HEMT基MMIC的频率范围从100 GHz到600 GHz。这两种技术都依赖于合适的HEMT结构的最先进的外延生长，这也是在该研究所进行的。作为这些技术成熟的例子，GaN基两级功率放大器工作在V波段的描述和变形HEMT技术的300 GHz的芯片组太赫兹成像应用，以及一个宽带六级放大器工作在600 GHz左右。
At the Fraunhofer Institute for Applied Solid State Physics (IAF) III-V compound semiconductors are used in high speed technologies. Here we focus on GaN-based Monolithic Millimeter-Wave Integrated Circuits (MMICs) for applications in the frequency regime between 2 GHz and 100 GHz and on metamorphic HEMT based MMICs for frequencies spanning from 100 GHz up to 600 GHz. Both technologies rely on state of the art epitaxial growth of suitable HEMT structures which is also carried out at the institute. As examples for the maturity of these technologies a GaN-based two-stage power amplifier operating in V-band is described and for the metamorphic HEMT technology a 300 GHz chip set for THz imaging applications as well as a broad-band six-stage amplifier operating around 600 GHz are presented.