Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
Dry Etching Technologies of Optical Device and III-V Compound Semiconductors
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光学器件和III-V族化合物半导体干法刻蚀技术
DOI：
10.1587/transele.e100.c.150
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
K. Furuta
中科院分区：
文献类型：
--
作者：
R. Kamimura;K. Furuta
干法刻蚀是制造光学器件的基本工艺之一。为了利用干法蚀刻工艺获得所需的形状，有必要了解材料对等离子体的反应性。特别是，III-V化合物半导体具有由多个元素组成的多层结构，因此，重要的是首先要充分了解等离子体干法刻蚀的基本趋势、等离子体的类型和刻蚀等离子体源的特性。本文将介绍用于半导体激光器和发光二极管等光源的III-V化合物半导体刻蚀技术。还将介绍用于形成光波导的玻璃、LN和LT以及MLA。最后，对干法刻蚀的发展前景进行了展望。关键词：光学器件、III-V化合物半导体、干法刻蚀、LD、LED、玻璃
Dry etching is one of the elemental technologies for the fabrication of optical devices. In order to obtain the desired shape using the dry etching process, it is necessary to understand the reactivity of the materials being used to plasma. In particular, III-V compound semiconductors have a multi-layered structure comprising a plurality of elements and thus it is important to first have a full understanding of the basic trends of plasma dry etching, the plasma type and the characteristics of etching plasma sources. In this paper, III-V compound semiconductor etching for use in light sources such as LDs and LEDs, will be described. Glass, LN and LT used in the formation of waveguides and MLA will be introduced as well. And finally, the future prospects of dry etching will be described briefly. key words: optical device, III-V compound semiconductor, dry etching, LD, LED, glass