Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond
Lithographic qualification of new opaque MoSi binary mask blank for the 32-nm node and beyond
复制标题
适用于 32 纳米及以上节点的新型不透明 MoSi 二元掩模坯料的光刻鉴定
DOI：
10.1117/1.3295712
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发表时间：
2010
影响因子：
2
通讯作者：
Yasutaka Kikuchi
中科院分区：
文献类型：
--
作者：
G. McIntyre;M. Hibbs;J. Tirapu;G. Han;S. Halle;T. Faure;R. Deschner;B. Morgenfeld;Sridhar Ramaswamy;A. Wagner;T. Brunner;Yasutaka Kikuchi
我们讨论了在玻璃基板上由不透明的MoSi层组成的新型二元掩模坯的光刻定性，简称为OMOG。首先，将OMOG光刻性能与以前的铬/MoSi/玻璃二元强度掩模（BIM）坯料进行比较。标准的70纳米镀铬（COG）没有被考虑，因为它不符合掩模制造要求。理论和一系列模拟和实验研究表明，由于OMOG的行为与理想的薄掩模近似（TMA）非常相似，特别是由于电磁效应和光学接近校正（OPC）可预测性问题，OMOG的表现优于BIM。定义了一种新的tma可预测性度量，作为比较掩码空白的一种手段。与6%衰减相移相比，我们权衡了OMOG的相对优缺点。尽管对于32nm和22nm节点来说，这两种掩模空白可能都是足够的，但存在一些差异，并进行了描述。然而，总的来说，考虑到空白，得出的结论是，OMOG提供了32纳米及以上的最强大和可扩展的成像解决方案。
We discuss the lithographic qualification of a new type of binary mask blank consisting of an opaque layer of MoSi on a glass substrate, referred to simply as OMOG. First, OMOG lithographic performance will be compared to a previous chrome/MoSi/glass binary intensity mask (BIM) blank. Standard 70-nm chrome on class (COG) was not considered, as it failed to meet mask-making requirements. Theory and a series of simulation and experimental studies show OMOG to outperform BIM, particularly due to electromagnetic effects and optical proximity correction (OPC) predictability concerns, as OMOG behaves very similarly to the ideal thin mask approximation (TMA). A new TMA-predictability metric is defined as a means to compare mask blanks. We weigh the relative advantages and disadvantages of OMOG compared to 6% attenuated phase shifting. Although both mask blanks are likely sufficient for the 32-nm and 22-nm nodes, some differences exist and are described. Overall, however, of the blanks considered, it is concluded that OMOG provides the most robust and extendable imaging solution available for 32-nm and beyond.