Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption
Controlled Doping of Vacancy-Containing Few-Layer MoS2 via Highly Stable Thiol-Based Molecular Chemisorption
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DOI：
10.1021/acsnano.5b05173
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发表时间：
2015-12-01
期刊：
影响因子：
17.1
通讯作者：
Jung, Yeon Sik
中科院分区：
文献类型：
--
作者：
Sim, Dong Min;Kim, Mincheol;Jung, Yeon Sik
MoS 2被认为是未来纳米电子学中一种很有前途的二维有源沟道材料。然而，开发一种简便、可靠和可控的掺杂方法对于扩展二硫化钼的适用性仍然至关重要。在这里，我们报告的表面电荷转移掺杂通过硫醇基结合化学调制的电气性能的空位含二硫化钼（V-MoS 2）。虽然空位存在于20材料通常被认为是不可取的组件，我们表明，二硫化钼的电性能可以系统地利用硫醇基团和硫空位之间的紧密结合，并通过选择不同的官能团工程。例如，我们证明了具有孤电子对的含NH 2的硫醇分子可以用作n掺杂剂并实现电子密度的显著增加（Δ n = 3.7 × 10（12）cm（-2））。另一方面，富氟分子由于其高电负性可以提供p掺杂效应（Δ n = -7.0 × 10（11）cm（-2））。此外，通过光致发光（PL），X射线光电子能谱（XPS），和电气测量结果的n-和p-掺杂效果进行了系统的评估。硫醇分子的优异结合稳定性和通过热退火的恢复特性将使Cr2 MoS 2能够更广泛地应用于各种器件。
MoS2 is considered a promising two-dimensional active channel material for future nanoelectronics. However, the development of a facile, reliable, and controllable doping methodology is still critical for extending the applicability of MoS2. Here, we report surface charge transfer doping via thiol-based binding chemistry for modulating the electrical properties of vacancy-containing MoS2 (v-MoS2). Although vacancies present in 20 materials are generally regarded as undesirable components, we show that the electrical properties of MoS2 can be systematically engineered by exploiting the tight binding between the thiol group and sulfur vacancies and by choosing different functional groups. For example, we demonstrate that NH2-containing thiol molecules with lone electron pairs can serve as an n-dopant and achieve a substantial increase of electron density (Delta n = 3.7 x 10(12) cm(-2)) On the other hand, fluorine-rich molecules can provide a p-doping effect (Delta n = -7.0 x 10(11) cm(-2)) due to its high electronegativity. Moreover, the n- and p-doping effects were systematically evaluated by photoluminescence (PL), X-ray photoelectron spectroscopy (XPS), and electrical measurement results. The excellent binding stability of thiol molecules and recovery properties by thermal annealing will enable broader applicability of ultrathin MoS2 to various devices.