Control of plasma profile by voltage biasing in large diameter RF produced plasma
Control of plasma profile by voltage biasing in large diameter RF produced plasma
复制标题
在大直径射频产生的等离子体中通过电压偏置控制等离子体轮廓
DOI：
10.1016/s0257-8972(98)00758-0
复制
发表时间：
1999
影响因子：
5.4
通讯作者：
Y. Kawai
中科院分区：
文献类型：
--
作者：
S. Shinohara;Hiroshi Tsuji;Toshiro Yoshinaka;Y. Kawai
在大直径射频等离子体中，在很宽的填充压力P范围内，尝试通过对各种插入电极施加偏压来控制等离子体轮廓。（P=20mTorr）时，在中心等离子体区附近获得了20%的离子饱和电流增加，而对于负偏置情况，该饱和电流变化很小。对于偏置的两个同心圆柱体的内部的一个V= 20 V的情况下，在中心等离子体区域附近的离子饱和电流急剧增加了60%。Ar I和Ar II线强度的光学测量结果与探针数据一致。在较低的填充压力区（P=0.09mTorr）与使用的环形和盘型电极，电压偏置显示出显着的效果，改变离子饱和电流分布。
Control of plasma profile by voltage biasing to the various inserted electrodes was tried in the large diameter RF produced plasma in a wide range of filling pressure P. With an addition of positive DC biasing voltage V of 30V on the metal disk (P=20mTorr), an increase in the ion saturation current by 20% was obtained near the central plasma region, while for the negative biasing case this saturation current changed little. For the case of biasing the inner one of two concentric cylinders to V=20V, a drastic increase in the ion saturation current near the central plasma region by 60% was observed. Optical measurements on Ar I and Ar II line intensities exhibited consistent results with the probe data. In the lower filling pressure region (P=0.09mTorr) with the use of the ring- and disk-type electrodes, the voltage biasing showed pronounced effects on changing ion saturation current profiles.