Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors
Patterning organic semiconductors using "dry" poly(dimethylsiloxane) elastomeric stamps for thin film transistors
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DOI：
10.1021/ja058226v
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发表时间：
2006-03-29
影响因子：
15
通讯作者：
Bao, ZN
中科院分区：
文献类型：
--
作者：
Briseno, AL;Roberts, M;Bao, ZN
该通信演示了一种将未反应的低分子量（LMW）硅氧烷低聚物从新鲜制备的“干”PDMS印章转移到有机半导体图图化和通过选择性润湿将聚合物传导到功能器件中的方法。通过浸渍涂层将半导体图案化到修饰的表面上，其特征尺寸小至1 μm。功能晶体管阵列的场效应迁移率高达0.07 cm2/Vs。所提出的印刷方法消除了为制造图案而对SAMs进行油墨的需要，并产生了一种简单、快速和高度可复制的方法，可以从溶液中绘制有机半导体的图案。该方法还产生了由图像化PEDOT源极-漏极组成的柔性晶体管。
This communication demonstrates a method of transferring unreacted low molecular weight (LMW) siloxane oligomers from freshly prepared “dry” PDMS stamps for patterning organic semiconductors and conducting polymers into functional devices via selective wetting. The semiconductors were patterned onto the modified surfaces via dip-coating with well-resolved feature sizes as small as 1 μm. Functional transistor arrays exhibited field-effect mobilities as high as 0.07 cm2/Vs. The proposed printing method eliminates the need to ink SAMs for fabricating patterns and results in a simple, fast, and highly reproducible method of patterning organic semiconductors from solution. The method herein also produced a flexible transistor composed of patterned PEDOT source−drain electrodes.