Control electronics for semiconductor spin qubits
Control electronics for semiconductor spin qubits
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DOI：
10.1088/2058-9565/ab5e07
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发表时间：
2020-01-01
影响因子：
6.7
通讯作者：
Heinen, Stefan
中科院分区：
文献类型：
--
作者：
Geck, Lotte;Kruth, Andre;Heinen, Stefan
未来解决实际相关问题的通用量子计算机预计至少需要10(6)个量子位，这是目前少于50个量子位一起操作的大规模扩展。在不同类型的量子位中，固态量子位被认为是这种放大的可行候选者，但是连接和控制如此大量的量子位是一个尚未解决的复杂挑战。解决这一挑战的一种可能性是在低温下使用靠近量子位的量子位控制电路。在这项工作中，我们以双电子自旋量子比特的物理要求和标准65纳米互补金属氧化物半导体工艺的规格为参考，评估了这一想法的可行性。利用电气系统工程的原理和流程，我们提供完整控制电路架构的占地面积和功耗的现实估计。我们的研究结果表明，通过进一步的研究，有可能在量子比特附近提供可扩展的电气控制。
Future universal quantum computers solving problems of practical relevance are expected to require at least 10(6) qubits, which is a massive scale-up from the present numbers of less than 50 qubits operated together. Out of the different types of qubits, solid state qubits are considered to be viable candidates for this scale-up, but interfacing to and controlling such a large number of qubits is a complex challenge that has not been solved yet. One possibility to address this challenge is to use qubit control circuits located close to the qubits at cryogenic temperatures. In this work we evaluate the feasibility of this idea, taking as a reference the physical requirements of a two-electron spin qubit and the specifications of a standard 65 nmcomplementary metal-oxide-semiconductor process. Using principles and flows from electrical systems engineering we provide realistic estimates of the footprint and of the power consumption of a complete control-circuit architecture. Our results show that with further research it is possible to provide scalable electrical control in the vicinity of the qubit, with our concept.