Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping
Screening of the quantum-confined Stark effect in AlN/GaN nanowire superlattices by germanium doping
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DOI：
10.1063/1.4868411
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发表时间：
2014-03-10
影响因子：
4
通讯作者：
Eickhoff, M.
中科院分区：
文献类型：
--
作者：
Hille, P.;Muessener, J.;Eickhoff, M.
我们报告的AlN/GaN纳米线异质结构与锗掺杂的GaN纳米盘之间的AlN障碍嵌入的极化诱导的内部电场的静电屏蔽。锗在10（20）cm（-3）以上的浓度下的掺入使GaN纳米盘的光致发光发射能量向更高的能量移动，伴随着光致发光衰减时间的减少。同时，发射能量的厚度依赖性偏移显著降低。尽管施主浓度高，但没有观察到光致发光特性的劣化。(C)2014 AIP Publishing LLC.
We report on electrostatic screening of polarization-induced internal electric fields in AlN/GaN nanowire heterostructures with germanium-doped GaN nanodiscs embedded between AlN barriers. The incorporation of germanium at concentrations above 10(20) cm(-3) shifts the photoluminescence emission energy of GaN nanodiscs to higher energies accompanied by a decrease of the photoluminescence decay time. At the same time, the thickness-dependent shift in emission energy is significantly reduced. In spite of the high donor concentration, a degradation of the photoluminescence properties is not observed. (C) 2014 AIP Publishing LLC.