ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology
ZnO-GaN Hybrid Heterostructures as Potential Cost-Efficient LED Technology
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DOI：
10.1109/jproc.2009.2037444
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发表时间：
2010-03
影响因子：
20.6
通讯作者：
A. Bakin;A. Behrends;A. Waag;H. Lugauer;A. Laubsch;K. Streubel
中科院分区：
文献类型：
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作者：
A. Bakin;A. Behrends;A. Waag;H. Lugauer;A. Laubsch;K. Streubel
可靠和可重复的p型掺杂是制造高效zno基发光二极管的主要挑战。在过去的几年里，由于ZnO缺乏可靠的p型电导率，人们开始研究将ZnO和其他半导体结合起来，然后将其掺杂p型。其中一个概念是ZnO与GaN异质结构的结合，旨在制造混合led。我们讨论了在单一器件中结合ZnO和GaN杂化异质结构的问题以及潜在的好处。我们还介绍了我们使用倒置LED概念的ZnO-GaN混合LED的最新成果。混合led的外部量子效率超过35%。
Reliable and reproducible p-type doping is the main challenge for fabricating highly efficient ZnO-based light-emitting diodes. During the last few years, the lack of reliable p-type conductivity in ZnO has initiated research concerning the combination of ZnO and other semiconductors, which can then be doped p-type. One of these concepts is the combination of ZnO with GaN heterostructures aiming at the fabrication of hybrid LEDs. We discuss the problems as well as potential benefits from a combination of ZnO and GaN hybrid heterostructures in a single device. We also present our recent results on ZnO-GaN hybrid LEDs using an inverted LED concept. The hybrid LEDs have an external quantum efficiency of more than 35%.