A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors
A Computationally Efficient Generalized Poisson Solution for Independent Double-Gate Transistors
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DOI：
10.1109/ted.2009.2039098
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发表时间：
2010-01
影响因子：
3.1
通讯作者：
A. Sahoo;P. K. Thakur;S. Mahapatra
中科院分区：
文献类型：
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作者：
A. Sahoo;P. K. Thakur;S. Mahapatra
以前的技术用于解决1-D泊松方程（PE）严格的长沟道非对称和独立的双栅（IDG）晶体管的潜在模型，涉及多个相互耦合的隐式方程。由于这些方程需要自洽地求解，因此这种潜在模型对于紧凑建模显然是低效的。本文报道了一种不同的严格的技术，解决了相同的PE，其中一个可以获得的潜在的分布的广义IDG晶体管，涉及一个单一的隐式方程。所提出的泊松解决方案被证明是计算更有效的电路模拟比以前的解决方案。
Previous techniques used for solving the 1-D Poisson equation (PE) rigorously for long-channel asymmetric and independent double-gate (IDG) transistors result in potential models that involve multiple intercoupled implicit equations. As these equations need to be solved self-consistently, such potential models are clearly inefficient for compact modeling. This paper reports a different rigorous technique for solving the same PE by which one can obtain the potential profile of a generalized IDG transistor that involves a single implicit equation. The proposed Poisson solution is shown to be computationally more efficient for circuit simulation than the previous solutions.