Study of incident angle dependence for dual-band double negative-index material using elliptical nanohole arrays
Study of incident angle dependence for dual-band double negative-index material using elliptical nanohole arrays
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利用椭圆纳米孔阵列研究双波段双负折射率材料的入射角依赖性
DOI：
10.1364/josaa.29.000209
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发表时间：
2012-03-01
影响因子：
1.9
通讯作者：
Cryan, Martin J.
中科院分区：
文献类型：
--
作者：
Cao, Tun;Cryan, Martin J.
这项工作证明了由两个Au膜之间的Al2O3介电层组成的椭圆纳米孔阵列（ENAs）实现的双波段负折射率材料的角依赖性。本文首次分析了不同平面波入射角下ENA的散射系数和位移电流，发现在宽入射角范围内，在1095 nm和1680 nm的p极化下，ENA在多个波长（有效磁导率mu（eff）为负，有效介电常数epsilon（eff）为负）为双负。(C) 2012美国光学学会
This work demonstrates the angular dependence of dual-band negative-index materials implemented by elliptical nanohole arrays (ENAs) consisting of an Al2O3 dielectric layer between two Au films. This article, it is believed for the first time, analyzes the scattering coefficients and displacement current of the ENA at different angles of plane-wave incidence to show that the ENA is double negative (showing both a negative effective permeability mu(eff) and a negative effective permittivity epsilon(eff)) at multiple wavelengths (1095 and 1680 nm) for p polarization over a broad range of incident angles. (C) 2012 Optical Society of America