Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular‐beam epitaxy using solid phosphorus and arsenic valved cracking cells
Incorporation of arsenic and phosphorus in GaxIn1−xAsyP1−y alloys grown by molecular‐beam epitaxy using solid phosphorus and arsenic valved cracking cells
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DOI：
10.1063/1.362429
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发表时间：
1996-05
影响因子：
3.2
通讯作者：
J. Baillargeon;A. Cho;K. Cheng
中科院分区：
文献类型：
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作者：
J. Baillargeon;A. Cho;K. Cheng
GaxIn 1 − xAsyP 1 −y的生长是在（001）InP上通过分子束外延使用固体磷和砷阀门源进行的。相对阴离子掺入率被发现强烈依赖于Ga的摩尔分数，生长温度，和入射的As和P束通量。As和P的相对结合可以从入射的V列通量的平方比来预测。虽然作为阴离子总是优先纳入晶格，显着增强P掺入观察到的生长温度和Ga摩尔分数的增加。对于峰值光致发光发射波长在1.25和1.36 μm之间的晶格匹配组合物，发现了强烈的类刺分解和依赖于温度的表面形态。利用不同的GaxIn 1 − xAsyP 1 −y有源区制备了发射波长为1.21 ~ 1.53 μm的异质结激光二极管。当腔长为500 μm时，获得的最佳宽区阈值电流密度为1.7kA/cm ~ 2。
Growth of GaxIn1−xAsyP1−y was performed on (001) InP by molecular‐beam epitaxy employing solid phosphorus and arsenic valved sources. Relative anion incorporation rates were found strongly dependent upon the Ga mole fraction, growth temperature, and incident As and P beam fluxes. The relative incorporation of As and P can be predicted from the ratio of the square of the incident column‐V fluxes. Although the As anion always incorporated preferentially into the lattice, significant enhancement in P incorporation was observed as growth temperature and Ga mole fraction increased. Strong spinoidal decomposition and a temperature‐dependent surface morphology was found for lattice‐matched compositions having peak photoluminescence emission wavelengths between 1.25 and 1.36 μm. Heterojunction laser diodes utilizing different GaxIn1−xAsyP1−y active regions were fabricated with emission ranging from 1.21 to 1.53 μm. The best broad area threshold current density obtained for a 500 μm cavity length was 1.7 kA/cm2 wi...