XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS
XECL EXCIMER LASER ANNEALING USED IN THE FABRICATION OF POLY-SI TFTS
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DOI：
10.1109/edl.1986.26372
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发表时间：
1986-05-01
影响因子：
4.9
通讯作者：
SEKIYA, M
中科院分区：
文献类型：
--
作者：
SAMESHIMA, T;USUI, S;SEKIYA, M
Mo栅n沟道多晶硅薄膜晶体管（TFT）首次在260°C的低加工温度下制造。用XeCl准分子激光（308 nm）在不加热玻璃衬底的情况下退火，成功地晶化了500-1000埃厚的a-Si：H。在结晶的Si膜中制造TFT。当用能量密度为200 mJ/cm 2的激光退火使a-Si：H结晶时，TFT的沟道迁移率为180 cm 2/V.s。这一结果表明，高速硅器件可以制造在低温下使用XeCl准分子激光退火。
Mo-gate n-channel poly-Si thin-film transistors (TFT's) have been fabricated for the first time at a low processing temperature of 260°C. A 500-1000-A-thick a-Si:H was successfully crystallized by XeCl excimer laser (308nm) annealing without heating a glass substrate. TFT's were fabricated in the crystallized Si film. The channel mobility of the TFT was 180cm2/V.s when the a-Si:H was crystallized by annealing with a laser having an energy density of 200 mJ/cm2. This result shows that high-speed silicon devices can be fabricated at a low temperature using XeCl excimer laser annealing.