Photosensitization of base-developable poly(phenylhydrosilane) with 3,3', 4,4'-tetra(tert-butylperoxycarbonyl)benzophenone. Mechanism of the drastic photosensitization in terms of photoinduced electron transfer
Photosensitization of base-developable poly(phenylhydrosilane) with 3,3', 4,4'-tetra(tert-butylperoxycarbonyl)benzophenone. Mechanism of the drastic photosensitization in terms of photoinduced electron transfer
复制标题
可碱显影的聚(苯基氢硅烷)与3,3,4,4-四(叔丁基过氧羰基)二苯甲酮的光敏化。
DOI:
10.1021/ma980881i
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发表时间:
1998
期刊:
影响因子:
5.5
通讯作者:
S. Hayase
中科院分区:
文献类型:
--
作者:
Rikako Kani;Y. Nakano;H. Yoshida;S. Hayase
A likely mechanism of especially large photosensitization for a base-developable poly-(phenylhydrosilane) resist (1) in the presence of 3,3',4,4'-tetra(tert-butylperoxycarbonyl)benzophenone (EA1) is discussed in terms of photolysis rates and dissolution rates. The increase in the photolysis rate occurs through photoinduced electron transfers from polysilanes to electron acceptors. The fluorescence quenching rate of in the presence of EA1 is almost the same as that in the presence of benzophenone (EA2). However, EA1 does increase both photolysis rates and resist sensitivities, but EA2 does not. The difference between EA1 and EA2 is discussed in terms of back-electron transfer in order to explain the importance of the presence of peroxide moieties. In the case of EA2, photoinduced electron transfers as well as back-electron transfers occur. In case of EA1, the cleavage of peroxide bonds on the benzophenone moiety would effectively inhibit the back-electron transfer to the 1 radical cation. The same phenomena are observed for C-60. EA1 photodecomposes to form compounds bearing carboxylic acids which also facilitate the dissolution of photolysis products of into basic aqueous solutions.