ScAlMgO 4 : an Oxide Substrate for GaN Epitaxy
ScAlMgO 4 : an Oxide Substrate for GaN Epitaxy
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DOI：
10.1557/s1092578300001733
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发表时间：
1996-11
期刊：
影响因子：
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通讯作者：
E. Hellman;C. Brandle;L. Schneemeyer;D. Wiesmann;I. Brener;T. Siegrist;G. Berkstresser;D. Buchanan;E. Hartford
中科院分区：
文献类型：
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作者：
E. Hellman;C. Brandle;L. Schneemeyer;D. Wiesmann;I. Brener;T. Siegrist;G. Berkstresser;D. Buchanan;E. Hartford
The authors report the use of ScAlMgO{sub 4} as a substrate for the epitaxial growth of wurzitic GaN. The low misfit (+ 1.8%) allows coherent epitaxy of GaN, as observed by RHEED. The congruent melting of ScAlMgO{sub 4} makes Czochralski growth possible, suggesting that large, high quality substrates can be realized. Boules about 17 mm in diameter are reported. The authors have used nitrogen-plasma molecular beam epitaxy to grow GaN epitaxial films onto ScAlMgO{sub 4} substrates. Band-gap photoluminescence has been observed from some of these films, depending primarily on the deposition conditions. A 3 x 3 superstructure has been observed by RHEED on the GaN surfaces. Structural analysis by x-ray diffraction indicates very good in-plane alignment of the GaN films. They also report thermal expansion measurements for ScAlMgO{sub 4}.
