Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films
Nonbolometric bottleneck in electron-phonon relaxation in ultrathin WSi films
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DOI：
10.1103/physrevb.97.184512
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发表时间：
2016-07
影响因子：
3.7
通讯作者：
M. Sidorova;A. Kozorezov;A. Semenov;Y. Korneeva;M. Mikhailov;A. Devizenko;A. Korneev;G. Chulkova;G. Goltsman
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文献类型：
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作者：
M. Sidorova;A. Kozorezov;A. Semenov;Y. Korneeva;M. Mikhailov;A. Devizenko;A. Korneev;G. Chulkova;G. Goltsman
我们建立了内部声子瓶颈模型来描述声软超薄金属薄膜与声刚性衬底之间的能量交换。将薄膜中的声子分为逃逸和非逃逸两类，我们表明电子和非逃逸声子可能形成一个统一的子系统，该子系统仅由于与逃逸声子的相互作用而冷却，无论是由于直接声子转换还是由于与电子系统的间接顺序相互作用。利用亚太赫兹辐射的调幅吸收技术，研究了超薄硅化钨无序薄膜中的电子-声子弛豫。我们找到了内部声子瓶颈的实验证明。基于该模型的实验和模拟结果吻合良好，在T_C = 3.4 K时，tau_{e-ph} = 140 ~ 190 ps，支持了早期独立技术测量的结果。
We developed the model of the internal phonon bottleneck to describe the energy exchange between the acoustically soft ultrathin metal film and acoustically rigid substrate. Discriminating phonons in the film into two groups, escaping and nonescaping, we show that electrons and nonescaping phonons may form a unified subsystem, which is cooled down only due to interactions with escaping phonons, either due to direct phonon conversion or indirect sequential interaction with an electronic system. Using an amplitude-modulated absorption of the sub-THz radiation technique, we studied electron-phonon relaxation in ultrathin disordered films of tungsten silicide. We found an experimental proof of the internal phonon bottleneck. The experiment and simulation based on the proposed model agree well, resulting in tau_{e-ph} = 140-190 ps at T_C = 3.4 K, supporting the results of earlier measurements by independent techniques.