Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon
Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon
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DOI：
10.1063/1.4813823
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发表时间：
2013-07-15
影响因子：
4
通讯作者：
Gonzalez-Diaz, G.
中科院分区：
文献类型：
--
作者：
Garcia-Hemme, E.;Garcia-Hernansanz, R.;Gonzalez-Diaz, G.
We have analyzed the spectral sub-bandgap photoresponse of silicon (Si) samples implanted with vanadium (V) at different doses and subsequently processed by pulsed-laser melting. Samples with V concentration clearly above the insulator-metal transition limit show an important increase of the photoresponse with respect to a Si reference sample. Their photoresponse extends into the far infrared region and presents a sharp photoconductivity edge that moves towards lower photon energies as the temperature decreases. The increase of the value of the photoresponse is contrary to the classic understanding of recombination centers action and supports the predictions of the insulator-metal transition theory. (C) 2013 AIP Publishing LLC.
