Structural and electronic characterization of epitaxially-grown ferroelectric vinylidene fluoride oligomer thin films
Structural and electronic characterization of epitaxially-grown ferroelectric vinylidene fluoride oligomer thin films
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外延生长铁电偏二氟乙烯低聚物薄膜的结构和电子表征
DOI：
10.1557/proc-600-101
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
K. Matsushige
中科院分区：
文献类型：
--
作者：
K. Ishida;K. Noda;A. Kubono;T. Horiuchi;Hirofumi Yamada;K. Matsushige
研究了新合成的偏氟乙烯（VDF）齐聚物薄膜在不同基底上的结构和电学性能。VDF低聚物薄膜的结构行为强烈依赖于衬底的种类和薄膜制备过程中的衬底温度。VDF低聚物在KBr（001）上外延生长，分子链沿着衬底表面方向排列，与极性I型聚VDF晶体相似。而在NaCl（001）、SiO2/Si上蒸镀的薄膜为非极性的II型或I型和II型的混合晶体，分子链垂直于表面。这些事实表明，基于货车范德华力和静电相互作用的基底晶场对VDF齐聚物的铁电相变有很强的影响。此外，我们证明了形成的局部极化域的外延晶体通过施加电脉冲从导电AFM探针用作可定位的topelectrode，并确认其压电性的VDF低聚物的第一次。
The structural and electric properties of newly synthesized vinylidene fluoride (VDF) oligomer thin films evaporated on various substrate were investigated. The structural behavior of the VDF oligomer thin films strongly depended on the kinds of substrate and substrate temperature during film preparation. In particular, the VDF oligomers epitaxially grew on KBr(001), aligned their molecular chain along the direction of substrate surface, and were similar to polar Form Itype crystals of poly(VDF). While, the thin films evaporated on NaCl(001), SiO 2 /Si were non-polar Form II-type or mixture of both Form I- and Form II-type crystals with their molecular chain normal to the surface. These facts indicated that crystal field of substrate, based on van der Waals and electrostatic interactions, strongly influenced to ferroelectric phase transition of the VDF oligomer. In addition, we demonstrate the formation of the local polarized domains in the epitaxial crystals by applying electric pulses from a conducting AFM probe used as a positionable topelectrode, and confirm their piezoelectricity of the VDF oligomers for the first time.