Compact chromium oxide thin film resistors for use in nanoscale quantum circuits
Compact chromium oxide thin film resistors for use in nanoscale quantum circuits
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DOI：
10.1063/1.4901933
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发表时间：
2014-07
影响因子：
3.2
通讯作者：
C. Nash;J. C. Fenton;N. G. N. Constantino-N.-G.-N.-Constantino-50812806;P. Warburton
中科院分区：
文献类型：
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作者：
C. Nash;J. C. Fenton;N. G. N. Constantino-N.-G.-N.-Constantino-50812806;P. Warburton
我们报告的一系列薄的非晶氧化铬（CrOx）薄膜，直流溅射生长的电特性，以评估其适用于作为片上电阻器在纳米电子学。通过增加氧掺杂的水平，CrOx膜的室温方块电阻从28 Ω/Ω变化到32.6 k Ω/Ω。研究了在液氦中冷却到4.2 K时电阻的变化;在4.2 K时，薄层电阻随组分从65 Ω/Ω变化到20 G Ω/Ω以上。所有测量的膜在所有测量的温度下显示线性电流-电压特性。对于用于使用硅纳米线进行量子相位滑移测量的片上器件，需要硅纳米线和氧化铬之间的界面。我们还表征了一种CrOx组合物在与铝-硅的界面处的接触电阻。发现金中间层是有利的：氧化铬-金界面的比接触电阻率为0.14 mΩc。
We report on the electrical characterisation of a series of thin amorphous chromium oxide (CrOx) films, grown by dc sputtering, to evaluate their suitability for use as on-chip resistors in nanoelectronics. By increasing the level of oxygen doping, the room-temperature sheet resistance of the CrOx films was varied from 28 Ω/◻ to 32.6 k Ω/◻. The variation in resistance with cooling to 4.2 K in liquid helium was investigated; the sheet resistance at 4.2 K varied with composition from 65 Ω/◻ to above 20 G Ω/◻. All of the films measured displayed linear current–voltage characteristics at all measured temperatures. For on-chip devices for quantum phase-slip measurements using niobium–silicon nanowires, interfaces between niobium–silicon and chromium oxide are required. We also characterised the contact resistance for one CrOx composition at an interface with niobium–silicon. We found that a gold intermediate layer is favourable: the specific contact resistivity of chromium-oxide-to-gold interfaces was 0.14 mΩc...