Analysis of Random Telegraph Noise in 45-nm CMOS Using On-Chip Characterization System
Analysis of Random Telegraph Noise in 45-nm CMOS Using On-Chip Characterization System
复制标题
使用片上表征系统分析 45 nm CMOS 中的随机电报噪声
DOI：
10.1109/ted.2013.2254118
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发表时间：
2013
影响因子：
3.1
通讯作者：
K. Shepard
中科院分区：
文献类型：
--
作者：
S. Realov;K. Shepard
在45纳米CMOS工艺中实现的片上可变性表征系统用于小面积器件中随机电报噪声（RTN）的直接时域测量。开发了一种从大量测量数据中自动提取RTN参数的程序。通过器件极性、偏置和栅极面积，研究了陷阱数量、NT和单陷阱振幅ΔV<sub>th</sub>的统计数据。泊松分布用于模拟NT，对数正态分布用于模拟ΔV<sub>th</sub>。讨论了两种统计量在闸门尺寸上的标度；NT的期望值与（L - ΔL）<sup>-1</sup>成比例，而AV<sub> </sub>的期望值与W<sup>-1</sup>(L - ΔL)<sup>-0.5</sup>成比例。这两个统计量被组合在一个紧凑的RTN概率模型中，该模型表示由于RTN而产生的整个ΔV<sub> </sub>波动的统计量。该模型被证明可以准确预测实测RTN分布在第95百分位水平的尾部，其尺度为W<sup>-1</sup>(L - ΔL)<sup>-1.5</sup>。nMOS和pMOS器件的比较表明，pMOS器件具有更高的平均陷阱数量和更大的平均单陷阱ΔV<sub>th</sub>振幅，导致RTN的总体影响相对更大。
An on-chip variability characterization system implemented in a 45-nm CMOS process is used for direct time-domain measurements of random telegraph noise (RTN) in small-area devices. A procedure for automated extraction of RTN parameters from large volumes of measured data is developed. Statistics for number of traps, NT, and single-trap amplitudes, ΔV<sub>th</sub>, are studied across device polarity, bias, and gate area. A Poisson distribution is used to model NT and a log-normal distribution is used to model ΔV<sub>th</sub>. The scaling of the two statistics across gate dimensions is discussed; the expected value of NT is shown to scale with (L - ΔL)<sup>-1</sup>, whereas the expected value of AV<sub>th</sub> is shown to scale with W<sup>-1</sup>(L - ΔL)<sup>-0.5</sup>. The two statistics are combined in a compact RTN probabilistic model representing the statistics of the overall ΔV<sub>th</sub> fluctuations because of RTN. This model is demonstrated to give accurate predictions of the tails of the measured RTN distributions at the 95th percentile level, which scale with W<sup>-1</sup>(L - ΔL)<sup>-1.5</sup>. A comparison between nMOS and pMOS devices shows that pMOS devices exhibit both a higher average number of traps and a larger average single-trap ΔV<sub>th</sub> amplitude, leading to a comparatively larger overall impact of RTN.