High Purity Germanium - Low Temperature Hall Analyses
High Purity Germanium - Low Temperature Hall Analyses
复制标题
高纯锗 - 低温霍尔分析
DOI：
--
复制
发表时间：
1974
期刊：
影响因子：
--
通讯作者：
G. Armantrout
中科院分区：
文献类型：
--
作者：
R. Wichner;S. Swierkowski;G. Armantrout
我们在下文中简要介绍了对从美国六个实验室获得的58个高纯锗样品进行低温（~7° K）霍尔测量的结果，加拿大和欧洲。测量结果表明，深（Cu）和浅层次（III和V族）的化学杂质的存在，以及与复杂的空位和/或氧化物缺陷的深能级。一般来说，我们发现高纯度锗倾向于得到相当好的补偿，即，在77° K时，单个受体或供体浓度通常是净载流子浓度的3至10倍。结果表明，就化学杂质而言，铜污染一般是一个问题，在那些实验室使用电阻加热的拉。浅能级杂质问题似乎与铝最频繁，观察到一些硼污染。还观察到缺陷相关的深能级的存在。
We present below a synopsis of results of low temperature (to ~7° K) Hall measurements on 58 samples of high purity germanium obtained from six laboratories in the U.S., Canada, and Europe. The measurements show the presence of deep (Cu) and shallow level (Group III and V) chemical impurities as well as deep energy levels associated with complex vacancy and/or oxide defects. In general, we have found that high purity germanium tends to be rather well compensated, i.e., the individua acceptor or donor concentrations are typically 3 to 10 times that of the net carrier concentration at 77° K. The results show that as far as chemical impurities are concerned, Cu contamination is generally a problem at those laboratories using resistance-heated pullers. Shallow level impurity problems seem to be associated with Al most frequently, with some boron contamination observed. The presence of defect-related deep levels has also been observed.