Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates
Self-organized growth of InAs quantum wires and dots on InP(001): The role of vicinal substrates
复制标题
DOI：
10.1063/1.1884762
复制
发表时间：
2005-03
影响因子：
4
通讯作者：
O. Bierwagen;W. Masselink
中科院分区：
文献类型：
--
作者：
O. Bierwagen;W. Masselink
我们已经通过气源分子束外延在名义取向和邻近的InP上研究了InP基体中InAs纳米结构的自组织生长（001）。原子力显微镜和低温光致发光表明，邻近基板的截断方向——在很大程度上与生长条件无关——决定了纳米结构的形态，即量子点、量子线或二维生长；然而，在名义上取向的衬底上，形貌非常强烈地依赖于生长条件。
We have studied the self-organized growth of InAs nanostructures in an InP matrix by gas-source molecular-beam epitaxy on both nominally oriented and vicinal InP(001). Atomic force microscopy and low-temperature photoluminescence demonstrate that the off-cut direction of vicinal substrates—largely independent of growth conditions—determines the morphology of nanostructures, that is, quantum dot, quantum wire, or two-dimensional growth; whereas, on nominally oriented substrates, the morphology is very strongly dependent on the growth conditions.