Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
Improving carrier transport in AlGaN deep-ultraviolet light-emitting diodes using a strip-in-a-barrier structure
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DOI：
10.1364/ao.394149
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发表时间：
2020-06-10
期刊：
影响因子：
1.9
通讯作者：
Nguyen, Hieu Pham Trung
中科院分区：
文献类型：
--
作者：
Velpula, Ravi Teja;Jain, Barsha;Nguyen, Hieu Pham Trung
本文报道了无电子阻挡层AlGaN发光二极管（LED）的说明工作在深紫外（DUV）波长在270 nm左右。在这项工作中，我们证明了在最后一个量子势垒（LQB）的中间集成一个优化的薄的未掺杂AlGaN带层可以产生足够的导带势垒高度，有效地减少电子溢出到p-GaN区域。此外，由于在AlGaN条和LQB的界面处的大量空穴积累，到多量子阱有源区中的空穴注入显著增加。因此，与传统的基于p型EBL的LED结构相比，所提出的LED结构的内部量子效率和输出功率已经被极大地增强。(C)2020美国光学学会
This paper reports the illustration of electron blocking layer (EBL)-free AlGaN light-emitting diodes (LEDs) operating in the deep-ultraviolet (DUV) wavelength at similar to 270 nm. In this work, we demonstrated that the integration of an optimized thin undoped AlGaN strip layer in the middle of the last quantum barrier (LQB) could generate enough conduction band barrier height for the effectively reduced electron overflow into the p-GaN region. Moreover, the hole injection into the multi-quantum-well active region is significantly increased due to a large hole accumulation at the interface of the AlGaN strip and the LQB. As a result, the internal quantum efficiency and output power of the proposed LED structure has been enhanced tremendously compared to that of the conventional p-type EBL-based LED structure. (C) 2020 Optical Society of America