How good are 2D transistors? An application-specific benchmarking study
How good are 2D transistors? An application-specific benchmarking study
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DOI：
10.1063/5.0029712
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发表时间：
2021-01-18
影响因子：
4
通讯作者：
Franklin, Aaron D.
中科院分区：
文献类型：
--
作者：
Abuzaid, Hattan;Williams, Nicholas X.;Franklin, Aaron D.
研究界在半导体二维（2D）材料方面投入了大量资金，如过渡金属二硫属化物（TMD）。当缩小到几个原子厚时，它们的稳定性使它们成为许多未来技术中取代或补充硅的有吸引力的候选者。虽然这种情绪很普遍，但2D场效应晶体管（FET）的演示通常不会以一种能够进行直接比较的方式呈现其数据。例如，一些论文仅使用迁移率作为品质因数，而其他论文则关注未归一化的器件导通电流。在这里，我们用场校正指标对一系列2D FET的性能进行了基准测试，这些指标可以更准确地预测它们的潜力;虽然所展示的方法并不全面，但它们提供了对未来2D FET改进基准测试的见解。重要的是，我们表明，适当的基准测试需要考虑特定的应用，其中三个主要的潜在应用领域是前端线（FEOL）高性能FET，后端线（BEOL）3D集成FET和低成本薄膜FET（或TFT）。我们发现，2D材料有潜力与硅竞争的规模FEOL高性能器件的通道。同时，在BEOL应用中，来自原位合成的2D材料的FET的性能受到其低晶体质量的限制-这是BEOL制造的严格热预算的结果，这需要使用转移的2D材料。在TFT领域，2D材料比硅基材料更容易制造，并且与其他材料替代品相比具有竞争力。尽管这些发现很有希望，但2D材料仍有许多障碍需要克服，包括可靠性差，性能可变性和制造可扩展性。强烈鼓励持续的研究努力，结合适当的基准。
The research community has invested heavily in semiconducting two-dimensional (2D) materials, such as transition metal dichalcogenides (TMDs). Their stability when scaled down to a few atoms thick makes them attractive candidates to replace or supplement silicon in many future technologies. Although this sentiment is prevalent, demonstrations of 2D field-effect transistors (FETs) often do not present their data in a way that enables a straightforward comparison. For example, some papers solely use mobility as the figure of merit, while others focus on unnormalized device on-current. Here, we benchmark the performance of a selection of 2D FETs with field-corrected metrics that allow a more accurate projection of their potential; while the demonstrated methods are by no means comprehensive, they provide insight into improved benchmarking of 2D FETs going forward. Importantly, we show that appropriate benchmarking requires consideration of the specific application, with the three dominant potential application areas of front-end-of-line (FEOL) high-performance FETs, back-end-of-line (BEOL) 3D-integrated FETs, and low-cost thin-film FETs (or TFTs) each demonstrated. We find that 2D materials have the potential to compete with silicon as the channel in scaled FEOL high-performance devices. Meanwhile, in BEOL applications, FETs from in situ synthesized 2D materials have performance limited by their low crystal quality - a result of the stringent thermal budget of BEOL fabrication, which necessitates the use of transferred 2D materials. In the TFT area, 2D materials are simpler to fabricate than their silicon-based counterparts and they are competitive with other material alternatives. As promising as these findings are, there remain many hurdles for 2D materials to overcome, including poor reliability, performance variability, and fabrication scalability. Continuous research effort, combined with appropriate benchmarking, is strongly encouraged.