Effect of gas Pressure on the Mechanical Properties of Sputtered TaN Films
Effect of gas Pressure on the Mechanical Properties of Sputtered TaN Films
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DOI：
10.1016/j.phpro.2013.11.068
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发表时间：
2013
期刊：
影响因子：
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通讯作者：
E. Liu;G. Jin;Xiufang Cui;Q. Xiao;T. Shao
中科院分区：
文献类型：
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作者：
E. Liu;G. Jin;Xiufang Cui;Q. Xiao;T. Shao
氮化钽作为一种有应用前景的材料，由于具有超硬度和高温稳定性等优良性能而引起了人们极大的兴趣。本文采用射频反应磁控溅射法在单晶高温合金上沉积了氮化钽薄膜。通过扫描电镜（SEM）、X射线衍射（XRD）、X射线应力测试和SRV摩擦磨损试验，研究了气压对薄膜力学性能、形貌、相结构、残余应力和摩擦学性能的影响。结果表明，氮气分压对合金的相结构、残余应力和纳米硬度有很大影响。
Tantalum nitride as a promising material for applications has attracted considerable interest due to such promising properties as superhardness and high temperature stability. In this paper, the TaN films were deposited on the single crystal superalloy by radio frequency (RF) reactive magnetron sputtering in an argon-nitrogen atmosphere. The effect of gas pressure on the mechanical property, morphology, phase structure, residual stress, tribological property of the films is investigated by scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray stress measurement and SRV friction and wear test, respectively. The results show that the partial pressure of N2 has a great influence on the phase structure, residual stress and nano-hardness.