Structural, electrical and optical properties of InGaZnO4\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {InGaZn
Structural, electrical and optical properties of InGaZnO4\documentclass[12pt]{minimal} \usepackage{amsmath} \usepackage{wasysym} \usepackage{amsfonts} \usepackage{amssymb} \usepackage{amsbsy} \usepackage{mathrsfs} \usepackage{upgreek} \setlength{\oddsidemargin}{-69pt} \begin{document}$$\hbox {InGaZn
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DOI:
10.1007/s10825-017-0977-8
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发表时间:
2017-03
影响因子:
2.1
通讯作者:
Xiaolong Zhou;Hanxing Cao;Zhaobo Zhou;J. Cao;Jie Yu
中科院分区:
文献类型:
--
作者:
Xiaolong Zhou;Hanxing Cao;Zhaobo Zhou;J. Cao;Jie Yu
First-principles calculations were performed to investigate the electrical and optical properties ofwith Sn-dopedand(IGZO). The band structure, density of states, optical properties including dielectric function, loss function, reflectivity and absorption coefficient are calculated. The calculated total energy shows that the most stable crystal structures are type III forand type II for. The band structure indicates the bothandare direct gap semiconductors. The intrinsic band gap ofis much narrower than that of, and results in a better electrical conductivity for. The density of states shows the main hybridization occurring between In-4dand O-2pstates forwhile between In-4dIn-5p, Zn-4sand O-2pstates fornear the valence band maximum. The reflectivity indexshows that the peak value ofandappears only in the ultraviolet range, indicating that these two materials have all excellent transparency. In addition, the absorption coefficientof bothandis high in the ultraviolet frequency range, and therefore they show, a high UV absorption rate.